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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3668
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high voltage applications such as high intensity discharge lamp drive.
ORDERING INFORMATION
PART NUMBER 2SK3668-ZK PACKAGE TO-263 (MP-25ZK)
(TO-263)
FEATURES
* Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A) * Gate voltage rating: 30 V * Low on-state resistance RDS(on) = 0.55 MAX. (VGS = 10 V, ID = 5.0 A) * Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
400 30 10 34 1.5 100 150 -55 to +150 10 8
V V A A W W C C A mJ
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current 5 Single Avalanche Energy
Note2 Note2
IAS EAS
5
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V, L = 100 H
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistane Rth(ch-C) Rth(ch-A) 1.25 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D16547EJ2V0DS00 (2nd edition) Date Published April 2003 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
2002
2SK3668
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage SYMBOL IDSS IGSS VGS(off)
Note
TEST CONDITIONS VDS = 400 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 150 V, ID = 5.0 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 100 100
UNIT
A
nA V S
2.5 3.0 5.6 0.40 1320 230 13 18 8 44 4
3.5
5 Forward Transfer Admittance
| yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
Note 5 Drain to Source On-state Resistance
0.55
pF pF pF ns ns ns ns nC nC nC V ns
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
VDD = 320 V VGS = 10 V ID = 10 A IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V di/dt = 100 A/s
26 7 11 0.90 350 2.7
VF(S-D) trr Qrr
C
Note Pulsed: PW 800 s, Duty Cycle 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 = 1 s Duty Cycle 1% ID
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L VDD PG.
D.U.T. RL VGS VGS
Wave Form
50
RG
0
10%
VGS
90%
VDD ID
90% 90%
IAS ID VDD
ID
0 10% 10%
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D16547EJ2V0DS
2SK3668
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120 120
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W
100
100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125 150 175
0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
TC - Case Temperature - C
5 FORWARD BIAS SAFE OPERATING AREA
100 PW = 1 ms
ID - Drain Current - A
ID(DC) = 10 A 10 RDS(on) Limited (at VGS = 10 V) DC 1
10 ms 100 ms
Power Dissipation Limited 0.1 TC = 25C Single pulse 0.01 0.1 1 10 100 1000
VDS - Drain to Source Voltage - V
5 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(t) - Transient Thermal Resistance - C/W
10
Rth(ch-A) = 83.3C/W
1
Rth(ch-C) = 1.25C/W
0.1
0.01
Single pulse Rth(ch-A): TA = 25C Rth(ch-C): TC = 25C
0.001
100
1m
10 m
100 m 1 PW - Pulse Width - s
10
100
1000
Data Sheet D16547EJ2V0DS
3
2SK3668
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
40 35 VGS = 20 V
FORWARD TRANSFER CHARACTERISTICS
100 VDS = 10 V Pulsed 10
ID - Drain Current - A
30 10 V 25 20 15 10 5 Pulsed 0 0 5 10 15 20 25 30
ID - Drain Current - A
1 TA = 150C 125C 75C 25C -25C
0.1
0.01
0.001
0.0001 0 5 10 15
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
4.0
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
100 VDS = 10 V Pulsed TA = 150C 125C 75C 25C -25C
VGS(off) - Gate Cut-off Voltage - V
VDS = 10 V ID = 1 mA 3.5
10
3.0
1
2.5
0.1
2.0
1.5 - 25 0 25 50 75 100 125 150
0.01 0.01
0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance -
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
2 VGS = 10 V Pulsed 1.5
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
1 0.9 0.8 ID = 10 A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 5.0 A 2.0 A Pulsed
1
0.5
0 0.01
0.1
1
10
100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D16547EJ2V0DS
2SK3668
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
1.4 1.2 1 ID = 10 A 0.8 0.6 0.4 0.2 0 - 25 5.0 A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss, Coss, Crss - Capacitance - pF
VGS = 10 V Pulsed
Ciss 1000
100
Coss
10 VGS = 0 f = 1.0 MHz Crss
0
25
50
75
100
125
150
1 0.01
0.1
1
10
100
1000
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400 16 ID = 10 A 350 300 250 200 150 100 50 0 VDS VGS VDD = 320 V 200 V 100 V 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
100
td(off) tf td(on)
10
tr
1
0 0.1 1 10 100
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 1000
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT trr - Reverse Recovery Time - ns
Pulsed
IF - Diode Forward Current - A
10
100
VGS = 10 V 1 0V
10
0.1
di/dt = 100 A/s VGS = 0 V 1 0.1 1 10 100
0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D16547EJ2V0DS
5
VGS - Gate to Source Voltage - V
VDD = 150 V VGS = 10 V R G = 10
2SK3668
5
100
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
VDD = 150 V VGS = 20 0 V RG = 25 IAS = 10 A
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 150 V RG = 25 VGS = 20 0V IAS 10 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
80
10 EAS = 8.0 mJ
60
40
1
20
0.1
0
100
1m
10 m
100 m
25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D16547EJ2V0DS
2SK3668
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZK)
10.00.3 No plating 7.88 MIN. 4
1.350.3
4.450.2 1.30.2
8.0 TYP.
9.150.3
15.250.5
0.025 to 0.25
0.5
0.750.2 2.54 1 2 3
0.2 8o
0 to
0.25 1.Gate 2.Drain 3.Source
2.5
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
2.540.25
Data Sheet D16547EJ2V0DS
7
2SK3668
* The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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